2000. 3. 14 1/2 semiconductor technical data KTD1411 epitaxial planar npn transistor revision no : 1 general purpose darlington transistor. features high dc current gain : h fe =3000(min.) (v ce =2v, i c =1a) maximum rating (ta=25 1 ) to-126 h j millimeters c e f g d a b dim a c e f g h j k m o p n l d 1. emitter 2. collector 3. base k l m n o p 8.3 max 5.8 0.7 3.1 0.1 3.5 11.0 0.3 2.9 max 1.0 max 1.9 max 0.75 0.15 14.0 min 2.3 0.1 0.75 0.15 1.6 3.4 max b 1 23 + _ + _ + _ + _ + _ electrical characteristics (ta=25 1 ) characteristic symbol rating unit collector-base voltage v cbo 80 v collector-emitter voltage v ceo 60 v emitter-base voltage v ebo 10 v collector current i c 4 a base current i b 0.5 a collector power dissipation (tc=25 1 ) p c 15 w junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =80v, i e =0 - - 20 a emitter cut-off current i ebo v eb =10v, i c =0 - - 100 a collector-emitter breakdown voltage v (br)ceo i c =10ma, i b =0 60 - - v dc current gain h fe (1) v ce =2v, i c =1a 3000 - - h fe (2) v ce =2v, i c =3a 1000 - - saturation voltage collector-emitter v ce(sat) i c =3a, i b =30ma - - 1.5 v base-emitter v be(sat) i c =3a, i b =30ma - - 2.0
2000. 3. 14 2/2 KTD1411 revision no : 1 c collector power dissipation p (w) 0 saturation voltage v (v) ce(sat) collector current i (a) c 0 ambient temperature ta ( c) c p - ta v - i h - i c collector current i (a) 0.1 0.3 0.5 1 fe dc current gain h fe c 35 10 v =2v ce ce(sat) c 50 4 8 12 16 500 1k 3k 5k 10k 30k common emitter 0.1 0 c 0.3 0.5 1 35 10 0.4 0.8 1.2 1.6 2.0 1.8 1.4 1.0 0.6 0.2 i - v be base emitter voltage v (v) be c v =3v 0 0 collector current i (a) c ce 0.5 1 1.5 2 1 2 3 4 safe operating area ce collector-emitter voltage v (v) 1 3 10 100 0.1 c collector current i (a) 30 550 0.3 0.5 1 3 5 10 curves must be derated linearly with increase in single nonrepetitive pulse tc=25 c * i max.(pulsed)* c c i max.(continuous) 100 s* 1ms* 1 0ms* dc opera ti on tc=25 c v max. ceo 100 150 200 25 75 125 175 18 2 6 10 14 i /i =100 b tc=ta infinite heat sink temperature
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